Triode/MOS tube/transistor/module
UMW (Friends Taiwan Semiconductor)
Fabricantes
CBI (Creation Foundation)
Fabricantes
Crystal Conductor Microelectronics
Fabricantes
Dual N-channel, 60V, 5A
Descripción
N-channel, 600V, 8A
Descripción
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
TWGMC (Taiwan Dijia)
Fabricantes
Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 1A Power (Pd): 1.3W DC current gain (hFE@Ic,Vce): 100@150mA, 2V
Descripción
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 500mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 700mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 250@100mA, 1V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)
Descripción
VBsemi (Wei Bi)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Ruichips (Ruijun Semiconductor)
Fabricantes
FOSAN (Fuxin)
Fabricantes
Current collector IC: 200MA Collector base withstand voltage BVCBO(V): 60V
Descripción
DIODES (US and Taiwan)
Fabricantes
onsemi (Ansemi)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
TECH PUBLIC (Taizhou)
Fabricantes