Triode/MOS tube/transistor/module
NCE (Wuxi New Clean Energy)
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onsemi (Ansemi)
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VISHAY (Vishay)
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onsemi (Ansemi)
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This dual N-channel MOSFET is designed to increase the overall efficiency of DC/DC converters and can be used with synchronous or traditional switching PWM controllers. It is optimized for low gate charge, low RDS(ON) and fast switching.
Descripción
WEIDA (Weida)
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CJ (Jiangsu Changdian/Changjing)
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NPN, Vceo=30V, Ic=3A
Descripción
BLUE ROCKET (blue arrow)
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BL (Shanghai Belling)
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Infineon (Infineon)
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GOFORD (valley peak)
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SHIKUES (Shike)
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NPN, Vceo=50V, Ic=150mA, hfe=200~400
Descripción
MSKSEMI (Mesenco)
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TWGMC (Taiwan Dijia)
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Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 160V Collector current (Ic): 600mA Power (Pd): 300mW DC current gain (hFE@Ic,Vce): 200@10mA, 5V G1 H gear 200- 300
Descripción
JSMSEMI (Jiesheng Micro)
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Infineon (Infineon)
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VBsemi (Wei Bi)
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