Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
XDS (Core Dingsheng)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
PNP, Vceo=-50V, Ic=-100mA
Descripción
NCE (Wuxi New Clean Energy)
Fabricantes
N-channel, 100V, 3A, 160 milliohms
Descripción
UMW (Friends Taiwan Semiconductor)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
N-channel, 100V, 130A
Descripción
China Resources Huajing
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
LGE (Lu Guang)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Type: N-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 60A On-Resistance (RDS(on)@Vgs,Id): 7mΩ@4.5V, 9mΩ@2.5V Threshold Voltage (Vgs( th)@Id): 0.5V-1.0@250μA
Descripción
PNP, Vceo=-40V, Ic=-600mA
Descripción
Infineon (Infineon)
Fabricantes
P-channel, 100V, 1A, 800mΩ@10V
Descripción
VBsemi (Wei Bi)
Fabricantes