Triode/MOS tube/transistor/module
LRC (Leshan Radio)
Fabricantes
digital triode
Descripción
onsemi (Ansemi)
Fabricantes
NPN, Vceo=45V, Ic=500mA, hfe=160~400
Descripción
N-channel, 30V, ±100mA, 5Ω@4V
Descripción
VISHAY (Vishay)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
P-channel, -30V, -5.6A, 46mΩ@-10V
Descripción
onsemi (Ansemi)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
ST (STMicroelectronics)
Fabricantes
Infineon (Infineon)
Fabricantes
CBI (Creation Foundation)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
Convert Semiconductor
Fabricantes
RealChip (Shenxin Semiconductor)
Fabricantes
ElecSuper (Jingxin Micro)
Fabricantes
Polarity PNP Power Dissipation (W) 0.3 Maximum Collector Current (mA) 500 Collector- Base Voltage (V) 40 Saturation Voltage Drop (V) 0.6 Collector/ Base Current (mA) 500/50 Maximum operating frequency (MHz) 150
Descripción
ST (STMicroelectronics)
Fabricantes
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is specifically designed to increase the overall energy efficiency and minimize the switching node noise of DC/DC converters, either synchronously or conventionally switching PWM controllers. It is optimized for low gate charge, low RDS(ON), fast switching and body diode reverse recovery.
Descripción