Triode/MOS tube/transistor/module
ST (STMicroelectronics)
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DIODES (US and Taiwan)
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ST (STMicroelectronics)
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Mixic (Zhongke Core Yida)
Fabricantes
1. 200mA collector output current (single channel); 2, high voltage resistance (30V); 3, input compatible with TTL/CMOS logic signal; 4, widely used in relay drive; 5, integrated 78L05 three-terminal voltage regulator device.
Descripción
VBsemi (Wei Bi)
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DIODES (US and Taiwan)
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JSMSEMI (Jiesheng Micro)
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VBsemi (Wei Bi)
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P-channel, -60V, -0.13A, 4.0Ω@-10V
Descripción
RealChip (Shenxin Semiconductor)
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ST (STMicroelectronics)
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N-channel, 30V, 6A, 0.021Ω@10V
Descripción
DIODES (US and Taiwan)
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SINO-IC (Coslight Core)
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LONTEN (Longteng Semiconductor)
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DIODES (US and Taiwan)
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Infineon (Infineon)
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onsemi (Ansemi)
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This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.
Descripción
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
ID drain current (A) 100 VDS withstand voltage (V) 30 RDS(on) on-resistance (Ω) 4 VGS 20 VGS(th) turn-on voltage 1.0-2.5 Type N
Descripción