Triode/MOS tube/transistor/module
FUXINSEMI (Fuxin Senmei)
Fabricantes
onsemi (Ansemi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Tokmas (Tokmas)
Fabricantes
onsemi (Ansemi)
Fabricantes
N-channel ignition IGBT for coils on automotive ignition coil driver circuits and plug applications.
Descripción
China Resources Huajing
Fabricantes
N-channel 650V 7A
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
IPS (China Resources core power)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 20A On-Resistance (RDS(on)@Vgs,Id): 87mΩ@10V, 90mΩ@4.5V Threshold Voltage (Vgs(th )@Id): 1.0V-2.5@250μA
Descripción
ST (STMicroelectronics)
Fabricantes
CRMICRO (China Resources Micro)
Fabricantes
Low voltage MOSFET for power supply, energy storage power supply, UPS, BMS, Vds=80V Id=180A Rds=2.0mΩ(2.4mΩ max) TO-247encapsulation
Descripción
NCE (Wuxi New Clean Energy)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
RealChip (Shenxin Semiconductor)
Fabricantes
DIOTEC (Diotec)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Transistor type: NPN, 60V 3A Device encapsulation: SOT-223
Descripción