Triode/MOS tube/transistor/module
MSKSEMI (Mesenco)
Fabricantes
Type: P-channel Drain-source voltage (Vdss): -20V Continuous drain current (Id): -2A Power (Pd): 1.5W On-resistance (RDS(on)
Descripción
Mixic (Zhongke Core Yida)
Fabricantes
1. 500mA collector output current (single channel); 2. High voltage resistance (50V); 3. Input compatible with TTL/CMOS logic signals; 4. Widely used in relay drive; 5. Electrostatic capacity: 2000V (HBM)
Descripción
VBsemi (Wei Bi)
Fabricantes
VISHAY (Vishay)
Fabricantes
ST (STMicroelectronics)
Fabricantes
XDM (Xin Da Mao)
Fabricantes
SIC MOS single tube
Descripción
JSMSEMI (Jiesheng Micro)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Ultra high voltage MOS tube
Descripción
Voltage VDSS650V, conduction resistance Rds0.64 ohms, charge Qg42nC, current ID12A
Descripción
SPTECH (Shenzhen Quality Super)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
BLUE ROCKET (blue arrow)
Fabricantes
LRC (Leshan Radio)
Fabricantes
NPN 300V 500mA Silk screen 1D Comply with ROHS environmental protection requirements Function and pin sequence are the same as MMBTA42 with long battery life
Descripción
ST (STMicroelectronics)
Fabricantes
plug-in plug-in eight Darlington outputs Darlington driver, 8-channel (8-ch)
Descripción
onsemi (Ansemi)
Fabricantes
Doesshare (Dexin)
Fabricantes
PNP -40V -600mA 100-300
Descripción
MOSFET Type N+N Drain-Source Voltage (Vdss) (V) 20 Threshold Voltage VGS ±12 Vth(V) 0.5-1 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 12
Descripción
PANJIT (Qiangmao)
Fabricantes