TVS fuse board level protection
AnBon (AnBon)
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WEIDA (Weida)
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Leiditech (Lei Mao Electronics)
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Littelfuse (American Littelfuse)
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DIODES (US and Taiwan)
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VBR=8.89V VC=13.6V IPP=44.1A bidirectional
Descripción
Liown (Liown Semiconductor)
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Slkor (Sakor Micro)
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PPP(W) 350 VRWM(V) 3.3 VBR(V) 4 VC(V) 13 IPP(A) 20 IR(uA) 40 CJ(pF) 450
Descripción
ST (STMicroelectronics)
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CJ (Jiangsu Changdian/Changjing)
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FTR (Qiao Optoelectronics)
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ElecSuper (Jingxin Micro)
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TECH PUBLIC (Taizhou)
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Brightking (Junyao Electronics)
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Reomax (Reomax)
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Square in-line slow blow 250V 8.0A fuse
Descripción
MSKSEMI (Mesenco)
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Peak pulse power (tp=8/20s) (PPP): 80W Maximum reverse peak pulse current (IPP): 8A Maximum clamping voltage (VC): 10V Working voltage (VRWM): 5V Breakdown voltage VBR): 5.6V -8.4V Junction Capacitance (CJ): 15PF
Descripción
TECH PUBLIC (Taizhou)
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HOLLY (Holly)
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SEMICON CHAMPION
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onsemi (Ansemi)
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The CM1230 is a family of 2-, 4-, and 8-channel ultra-low capacitance ESD protection diode arrays in CSP form factors. It is suitable for protecting systems with higher data and clock rates, or circuits requiring low capacitive loads. Each channel includes a pair of ESD diodes that act as clamping diodes to divert ESD current pulses to the positive or negative supply rail. A Zener diode is integrated between the positive and negative supply rails. This protects the VCC rail from ESD spikes while eliminating the need for bypass capacitors to absorb positive ESD spikes to ground. Each channel can safely dissipate ESD spikes of ±8kV, meeting level 4 requirements of the IEC61000-4-2 international standard, and ±15kV air discharge requirements of the IEC61000-4-2 specification.
Descripción
SUNMATE (Sunmate)
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