Triode/MOS tube/transistor/module
PNP, Vceo=-50V, IC=-100mA, PD=200mW, built-in bias resistor
Descripción
VBsemi (Wei Bi)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
FOSAN (Fuxin)
Fabricantes
Field Effect Transistor (MOSFET) VRRM:50V IF:1A
Descripción
ORIENTAL SEMI (Dongwei)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
Doesshare (Dexin)
Fabricantes
onsemi (Ansemi)
Fabricantes
Small Signal MOSFET, 30 V/?20 V, +0.25/?0.88 A, Complementary, SC?88
Descripción
VBsemi (Wei Bi)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
N-channel, 40V, 120A, 3.2mΩ@10V
Descripción
onsemi (Ansemi)
Fabricantes
N-channel, 600V, 10A
Descripción
VBsemi (Wei Bi)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
Dual NPN, Vcc=50V, Io=100mA, Pc=150mW
Descripción
Infineon (Infineon)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
MICROCHIP (US Microchip)
Fabricantes