Triode/MOS tube/transistor/module
Infineon (Infineon)
Fabricantes
N-channel, 150V, 104A, 11mΩ@10V
Descripción
Infineon (Infineon)
Fabricantes
onsemi (Ansemi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
GOFORD (valley peak)
Fabricantes
N-channel, 100V, 15A, 70mΩ@10V
Descripción
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
This PNP bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.
Descripción
LRC (Leshan Radio)
Fabricantes
P-channel, 12V, 4A, 68mΩ@4.5V
Descripción
Jingyang Electronics
Fabricantes
Type(P)/ESD(N)/VDS-20(V)/VGS12(±V)/VGS(th)-0.7(V)/ID-2.8(A)
Descripción
TI (Texas Instruments)
Fabricantes
N-Channel NexFET Power MOSFET 8-VSON-CLIP -55 to 150
Descripción
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Infineon (Infineon)
Fabricantes
ElecSuper (Jingxin Micro)
Fabricantes
STANSON (Statson)
Fabricantes
Type N VDSS(V) 30 VGS(V) 12 VTH(V) 0.6 IDS92°C(A) 15 RDS(Max) 40 PD92°C(W) 60
Descripción