Triode/MOS tube/transistor/module
Infineon (Infineon)
Fabricantes
N-channel 30V 13.3A
Descripción
VISHAY (Vishay)
Fabricantes
SILAN (Silan Micro)
Fabricantes
PUOLOP (Dipu)
Fabricantes
Infineon (Infineon)
Fabricantes
N+P dual channel, 20V/2.4A(-20V/-1.7A)
Descripción
VBsemi (Wei Bi)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 72 VGS(V) 20 ID(A)Max. 84 VGS(th)(v) - RDS(ON)(m?)@4.490V - Qg(nC)@4.5V - QgS(nC) 18 Qgd(nC) 28 Ciss(pF) 3150 Coss(pF) 300 Crss(pF) 240
Descripción
CBI (Creation Foundation)
Fabricantes
JESTEK (JESTEK)
Fabricantes
P channel -30V -4.2A
Descripción
JSMSEMI (Jiesheng Micro)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
N-channel, 100V, 11A, 180mΩ@10V
Descripción
DIODES (US and Taiwan)
Fabricantes
MATSUKI (pine wood)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
onsemi (Ansemi)
Fabricantes
This N-channel JFET device is suitable for analog switch and chopper applications.
Descripción
onsemi (Ansemi)
Fabricantes
This N-channel JFET device is suitable for analog switch and chopper applications.
Descripción
onsemi (Ansemi)
Fabricantes
The MJB42C is a 100 V, PNP bipolar complementary power transistor. Complementary NPN is MJB41C.
Descripción
BORN (Born Semiconductor)
Fabricantes