Triode/MOS tube/transistor/module
LONTEN (Longteng Semiconductor)
Fabricantes
LONTEN (Longteng Semiconductor)
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HUAYI (Hua Yi Wei)
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UMW (Friends Taiwan Semiconductor)
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Darlington driver, 7 channels (7-ch)
Descripción
APM (Jonway Microelectronics)
Fabricantes
LRC (Leshan Radio)
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VBsemi (Wei Bi)
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Sinopower (large and medium)
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VBsemi (Wei Bi)
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DIODES (US and Taiwan)
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FUXINSEMI (Fuxin Senmei)
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Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 60V Collector Current (Ic): 600mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 20nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 1.6V@500mA, 50mA DC current gain (hFE@Ic,Vce): 100@150mA, 10V Characteristic frequency (fT): 200MHZ Operating temperature: -55℃~+150℃@(Tj)
Descripción
NCE (Wuxi New Clean Energy)
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APM (Jonway Microelectronics)
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ST (STMicroelectronics)
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N-channel, 600V, 20A, 290mΩ@10V
Descripción
onsemi (Ansemi)
Fabricantes
P-channel, -60V, -12A, 62mΩ@-10V
Descripción