Triode/MOS tube/transistor/module
WILLSEMI (Will)
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ST (STMicroelectronics)
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Cmos (Guangdong Field Effect Semiconductor)
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onsemi (Ansemi)
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DIODES (US and Taiwan)
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NPN, Vceo=100V, Ic=6A
Descripción
TECH PUBLIC (Taizhou)
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AGM-Semi (core control source)
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Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 58A Power (Pd): 50W On-Resistance (RDS(on)@Vgs,Id): 6.2mΩ@10V,15A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 15nC@10V Input capacitance (Ciss@Vds): 0.976nF@30V, Vds=60V Id=58A Rds=6.2mΩ, working Temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;
Descripción
DIODES (US and Taiwan)
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MSKSEMI (Mesenco)
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Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 100A On-Resistance (RDS(on)@Vgs,Id): 5.5mΩ@10V, 9mΩ@4.5V Threshold Voltage (Vgs( th)@Id): 1.0V-2.5@250μA
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Sinopower (large and medium)
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inventchip (Zhenxin Electronics)
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650V, 60mΩ SiC MOSFET
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CJ (Jiangsu Changdian/Changjing)
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VBsemi (Wei Bi)
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VBsemi (Wei Bi)
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Slkor (Sakor Micro)
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Type PNP IC(A) -0.1 VCBO(V) -80 VCEO(V) -65 VEBO(V) -5 VCE(sat)(V) -0.5
Descripción
UMW (Friends Taiwan Semiconductor)
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CJ (Jiangsu Changdian/Changjing)
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HUASHUO (Huashuo)
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