Triode/MOS tube/transistor/module

This P-channel MOSFET is produced using an advanced Power Trench process, which is specially adapted to minimize on-resistance. This device is suitable for power management and load switching applications commonly found in notebook computers and portable battery packs.

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 100mA Power (Pd): 200mW On-Resistance (RDS(on)@Vgs,Id): 8Ω@4V, 100mA Threshold Voltage ( Vgs(th)@Id): 1.5V@100uA Operating temperature: +150℃@(Tj)

Configuration Single Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 62 VGS(th)(v) 1.8 RDS(ON)(m?)@4.202V 9 Qg(nC)@4.5V - QgS(nC) 12 Qgd(nC) 15.5 Ciss(pF) 1150 Coss(pF) 140 Crss(pF) 90

N-channel, 20V, 630mA

Voltage VDSS650V, conduction resistance Rds1.5 ohms, charge Qg29nC, current ID7A

N-channel 600V 2A

N-channel, 55V, 64A, 16mΩ@10V

N-channel 55V 15A