Triode/MOS tube/transistor/module

N channel

PNP, Vceo=-25V, Ic=-0.8A

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.

P channel -20V -3.5A

PNP

Configuration Single Type P-Ch VDS(V) -40 VGS(V) 20 ID(A)Max. -6 VGS(th)(v) -1.2 RDS(ON)(m?)@4.96V 40 Qg(nC) @4.5V - QgS(nC) 1.7 Qgd(nC) 2 Ciss(pF) 420 Coss(pF) 77 Crss(pF) 55

This Insulated Gate Bipolar Transistor (IGBT) utilizes a durable and cost-effective Super Field Stop Trench structure to provide excellent performance in demanding switching applications, along with low on-state voltage and lowest switching losses. The IGBT is ideal for UPS and solar applications. The device combines a soft and fast co-encapsulation freewheeling diode with low forward voltage.

The NFAL5065L4B is a Motion SPM module providing a fully functional, high performance inverter output stage for AC direct sense, BLDC and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including undervoltage lockout, overcurrent shutdown, high temperature monitoring of the driver IC, and fault reporting . Requiring only one supply voltage, the built-in high-speed HVIC converts incoming logic-level gate inputs into the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are provided for each phase to support the widest range of control algorithms.

The NFAL5065L4B is a Motion SPM module providing a fully functional, high performance inverter output stage for AC direct sense, BLDC and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including undervoltage lockout, overcurrent shutdown, high temperature monitoring of the driver IC, and fault reporting . Requiring only one supply voltage, the built-in high-speed HVIC converts incoming logic-level gate inputs into the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are provided for each phase to support the widest range of control algorithms.

The NFAL5065L4B is a Motion SPM module providing a fully functional, high performance inverter output stage for AC direct sense, BLDC and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including undervoltage lockout, overcurrent shutdown, high temperature monitoring of the driver IC, and fault reporting . Requiring only one supply voltage, the built-in high-speed HVIC converts incoming logic-level gate inputs into the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are provided for each phase to support the widest range of control algorithms.

N-channel 40V 120A

Semiconductor Transistor Field Effect Transistor MOS tube, TO-252, N channel, withstand voltage: 30V, current: 50A, 10V internal resistance (Max): 0.008Ω, 4.5V internal resistance (Max): 0.014Ω, power: 50W