Triode/MOS tube/transistor/module
PSI (Baolixin)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
NPN, Vceo=100V, Ic=2A
Descripción
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
MOS, TO-220F, N-channel, 200V, 10A, 360mΩ (Max), 38W
Descripción
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
Infineon (Infineon)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Infineon (Infineon)
Fabricantes
Slkor (Sakor Micro)
Fabricantes
XCH (Xu Changhui)
Fabricantes
Wuxi Unisplendour
Fabricantes
MOSFET Type P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 16/23 Continuous Drain Current ID (A) 10
Descripción
Infineon (Infineon)
Fabricantes
NCE (Wuxi New Clean Energy)
Fabricantes
Prisemi (core guide)
Fabricantes
N-channel 60V 450mA
Descripción