Triode/MOS tube/transistor/module
SINO-IC (Coslight Core)
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DIODES (US and Taiwan)
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UMW (Friends Taiwan Semiconductor)
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Cmos (Guangdong Field Effect Semiconductor)
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Infineon (Infineon)
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P channel -20V -2.8A
Descripción
WINSOK (Weishuo)
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Configuration Single Type N-Ch VDS(V) 200 VGS(V) 20 ID(A)Max. 9 VGS(th)(v) 1.8 RDS(ON)(m?)@4.405V - Qg(nC)@4.5V - QgS(nC) 2.36 Qgd(nC) 3.98 Ciss(pF) 509 Coss(pF) 51.2 Crss(pF) 3.2
Descripción
ORIENTAL SEMI (Dongwei)
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SHIKUES (Shike)
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LRC (Leshan Radio)
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NPN 40V 600mA silk screen 2X function and pin sequence are the same as the long-term MMBT4401
Descripción
KNSCHA (Kony Sheng)
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1200V 38A 1.2KV 38A silicon carbide MOSFET SiC MOS is used in photovoltaic inverters, industrial control, industrial power supplies, electric vehicle charging piles, and energy storage
Descripción
TECH PUBLIC (Taizhou)
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APM (Jonway Microelectronics)
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HT (Golden Honor)
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Gear position: 110-220
Descripción
ST (STMicroelectronics)
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LRC (Leshan Radio)
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PNP, V=-25V, Ic=-800mA, 150-300
Descripción
Infineon (Infineon)
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