Triode/MOS tube/transistor/module
onsemi (Ansemi)
Fabricantes
LOWPOWER (Weiyuan Semiconductor)
Fabricantes
TI (Texas Instruments)
Fabricantes
CSD17501Q5A 30V N-Channel NexFET Power MOSFET, Vgs is 20V
Descripción
ST (STMicroelectronics)
Fabricantes
STripFET series, N-channel, 100V, 15A, 0.13Ω@10V
Descripción
FUXINSEMI (Fuxin Senmei)
Fabricantes
Triac Three-quadrant Triac On-state RMS current IT(RMS): 16A, off-state repetitive peak voltage VDRM/VRRM: 800V, conduction voltage drop VTM: 1.55V, gate trigger current Igt3<35mA
Descripción
onsemi (Ansemi)
Fabricantes
This 6A, 100 V, PNP bipolar power transistor is suitable for general purpose amplifier and switching applications. BD243B, BD243C (NPN); BD244B, BD244C (PNP) are complementary devices.
Descripción
ST (STMicroelectronics)
Fabricantes
SILAN (Silan Micro)
Fabricantes
HUASHUO (Huashuo)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
SILAN (Silan Micro)
Fabricantes
N-channel, 200V, 18A
Descripción
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
WPMtek (Wei Panwei)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Type: N-channel Drain-source voltage (Vdss): -30V Continuous drain current (Id): 4A Power (Pd): 1.4W On-resistance (RDS(on)
Descripción
onsemi (Ansemi)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes