Triode/MOS tube/transistor/module

Type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 300mA Power (Pd): 350mW On-resistance (RDS(on)@Vgs,Id): 2.2Ω@10V, 300mA

N-CH 650V 60A

NPN, Vceo=30V, Ic=800mA

N-channel, 100V, 90A, 7mΩ@10V

This family of digital transistors is suitable for replacing a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.

NPN, Vceo=20V, Ic=1A

P-channel, -12V, -4.1A, 45mΩ@-4.5V