Triode/MOS tube/transistor/module

P-channel, -20V, -4.3A, 38mΩ@-10V

These dual N- and P-channel enhancement mode field effect transistors are produced using the advanced PowerTrench process, which is especially suited to minimize on-resistance while maintaining excellent switching performance. These devices are suitable for low-voltage and battery-powered applications requiring in-line low power loss and fast switching.

These dual N- and P-channel enhancement mode field effect transistors are produced using the advanced PowerTrench process, which is especially suited to minimize on-resistance while maintaining excellent switching performance. These devices are suitable for low-voltage and battery-powered applications requiring in-line low power loss and fast switching.

60V, N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 175

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 500mA Power (Pd): 300mW On-Resistance (RDS(on)@Vgs,Id): 900mΩ@10V Anti-static Application: Communication Modules, Industrial Control, Artificial Intelligence, Consumer Electronics