Triode/MOS tube/transistor/module

MOSFET Type N+P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.4-1 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 3

Semiconductor transistor field effect transistor MOS tube, SOP-8, P channel, withstand voltage: -30V, current: -18A, 10V internal resistance (Max): 0.022Ω, 4.5V internal resistance (Max): 0.038Ω, power: 3W

Semiconductor Transistor Field Effect Transistor MOS tube, TO-252, N channel, withstand voltage: 60V, current: 50A, 10V internal resistance (Max): 0.012Ω, power: 80W

Type: P-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 4.2A Power (Pd): 1.5W On-resistance (RDS(on)@Vgs,Id): 52mΩ@10V,4A

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.