Triode/MOS tube/transistor/module
ETERNAL (Yiyuan Technology)
Fabricantes
MOSFET Type N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 3/3.8 Continuous Drain Current ID (A) 120
Descripción
DIODES (US and Taiwan)
Fabricantes
N groove 600V 10A
Descripción
onsemi (Ansemi)
Fabricantes
This NPN bipolar transistor is suitable for general switching applications and features a SOT-23 surface mount encapsulation. This device is suitable for low power surface mount applications.
Descripción
onsemi (Ansemi)
Fabricantes
Automotive Power MOSFET, 60V, 3A, 120 mΩ, Single N-Channel, SOT-223, Logic Level. Suitable for low voltage high speed switching applications in power supplies, converters, power motor control and bridge circuits. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.
Descripción
ElecSuper (Jingxin Micro)
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VBsemi (Wei Bi)
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ST (STMicroelectronics)
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HUASHUO (Huashuo)
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LANKE (Lanke)
Fabricantes
Single-channel high-current Darlington tube@@single-channel high-current Darlington tube, output withstand voltage up to 50V, 500mA collector output current input compatible with TTL/CMOS logic signal
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
Mini-Circuits
Fabricantes
onsemi (Ansemi)
Fabricantes
Automotive Power MOSFETs for compact and efficient designs mounted in 8x8mm flat lead encapsulation with high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs and Production Part Approval Process (PPAP) compliant for automotive applications.
Descripción
LRC (Leshan Radio)
Fabricantes
N-channel, 60V, 115mA, 7.5Ω@5V
Descripción
VBsemi (Wei Bi)
Fabricantes
LONTEN (Longteng Semiconductor)
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NH (Air New Zealand)
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