Triode/MOS tube/transistor/module
LONTEN (Longteng Semiconductor)
Fabricantes
APEC (Fuding)
Fabricantes
LRC (Leshan Radio)
Fabricantes
Daxin (Daxin)
Fabricantes
1200v/200a 2.3Vce
Descripción
ST (STMicroelectronics)
Fabricantes
25 A standard and Snubberless triacs
Descripción
TECH PUBLIC (Taizhou)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
NPN, Vceo=65V, Ic=0.1A, hfe=200~450
Descripción
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
Type: P-channel Drain-source voltage (Vdss): 18V Continuous drain current (Id): 6.5A Power (Pd): 2W On-resistance (RDS(on)@Vgs,Id): 28mΩ@4.5V, 4.1A
Descripción
NCE (Wuxi New Clean Energy)
Fabricantes
NPN DARL 60V 2A
Descripción
VBsemi (Wei Bi)
Fabricantes
Littelfuse (American Littelfuse)
Fabricantes
Littelfuse (American Littelfuse)
Fabricantes
onsemi (Ansemi)
Fabricantes
This device includes two custom N-channel MOSFETs in a dual encapsulation. The switching nodes are already connected internally to allow easy placement and routing of the synchronous buck converter. The control MOSFET (Q1) and synchronization SyncFET (Q2) provide the best power efficiency.
Descripción
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes