Triode/MOS tube/transistor/module
CJ (Jiangsu Changdian/Changjing)
Fabricantes
Sinopower (large and medium)
Fabricantes
NH (Air New Zealand)
Fabricantes
Jingyang Electronics
Fabricantes
Type(P)/ESD(N)/VDS-30(V)/VGS12(±V)/VGS(th)-1.2(V)/ID-4.2(A)
Descripción
VISHAY (Vishay)
Fabricantes
UMW (Friends Taiwan Semiconductor)
Fabricantes
Infineon (Infineon)
Fabricantes
P-channel, -20V, -15A, 8.2mΩ@-4.5V
Descripción
LONTEN (Longteng Semiconductor)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
MOS tube type: P channel Drain-source voltage (Vdss): -30V Continuous drain current (Id): -12A Power (Pd): 2W On-resistance (RDS(on)@Vgs,Id): 9mΩ@10V, 10A
Descripción
MSKSEMI (Mesenco)
Fabricantes
MOS tube type: N-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 16A Power (Pd): 4W On-resistance (RDS(on)@Vgs,Id): 4.8Ω@10V, 6A
Descripción
MSKSEMI (Mesenco)
Fabricantes
MOS tube type: N-channel Drain-source voltage (Vdss): 100V Continuous drain current (Id): 12A Power (Pd): 347W On-resistance (RDS(on)@Vgs,Id): 115Ω@10V,10A
Descripción
MSKSEMI (Mesenco)
Fabricantes
MOS tube type: P channel Drain-source voltage (Vdss): -30V Continuous drain current (Id): -70A Power (Pd): 73W On-resistance (RDS(on)@Vgs,Id): 8mΩ@10V, 10A
Descripción
MSKSEMI (Mesenco)
Fabricantes
MOS tube type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 35A Power (Pd): 40W On-resistance (RDS(on)@Vgs,Id): 23Ω@10V, 10A
Descripción
MSKSEMI (Mesenco)
Fabricantes
Sinopower (large and medium)
Fabricantes
Ascend (Ansend)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes