Triode/MOS tube/transistor/module
N-channel, 650V, 21A, 120mΩ@18V
Descripción
YONGYUTAI (Yongyutai)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
N+N channel, 20V, 7.6A, 13mΩ@4.5V
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
N-channel, 30V, 5.8A, 35mΩ@10V
Descripción
DIODES (US and Taiwan)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
Type: N-channel Drain-source voltage (Vdss): -30V Continuous drain current (Id): 3.5A Power (Pd): 278MW On-resistance (RDS(on)
Descripción
ST (STMicroelectronics)
Fabricantes
N-channel, 500V, 7.2A, 850mΩ@10V
Descripción
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
Semiconductor Transistor Field Effect Transistor MOS tube, TO-252, N channel, withstand voltage: 30V, current: 90A, 10V internal resistance (Max): 0.0085Ω, 4.5V internal resistance (Max): 0.013Ω, power: 85W
Descripción
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
SALLTECH (Sari)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
HGSEMI (Huaguan)
Fabricantes
50V Tolerant Voltage, High Current Composite Transistor Array
Descripción
SPTECH (Shenzhen Quality Super)
Fabricantes
TWGMC (Taiwan Dijia)
Fabricantes
Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 65V Collector current (Ic): 100mA Power (Pd): 200mW 200~450 NPN, Vceo=65V, Ic=0.1A, silk screen 1B
Descripción
Convert Semiconductor
Fabricantes