Triode/MOS tube/transistor/module
MICROCHIP (US Microchip)
Fabricantes
onsemi (Ansemi)
Fabricantes
The NFAL3065L4B is an advanced Motion SPM module providing a fully functional, high performance inverter output stage for AC induction, BLDC and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including undervoltage lockout, overcurrent shutdown, high temperature monitoring of the driver IC, and fault reporting . Requiring only one supply voltage, the built-in high-speed HVIC converts incoming logic-level gate inputs into the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Each phase has separate negative IGBT terminals to support the widest range of control algorithms.
Descripción
VBsemi (Wei Bi)
Fabricantes
MSKSEMI (Mesenco)
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CBI (Creation Foundation)
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LRC (Leshan Radio)
Fabricantes
NPN, Vceo=45V, Ic=100mA, hfe=420~800
Descripción
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, the SUPERFET III MOSFET Easy drive family helps manage EMI issues for easier design implementation.
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes
JSMSEMI (Jiesheng Micro)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 100V, 180A, 4.3mΩ@10V
Descripción
ST (STMicroelectronics)
Fabricantes
ETERNAL (Yiyuan Technology)
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Infineon (Infineon)
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NCE (Wuxi New Clean Energy)
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SPTECH (Shenzhen Quality Super)
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DIODES (US and Taiwan)
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TMC (Taiwan Mao)
Fabricantes
Type N VDS(V) 30V VGS(V) ±20V Vth(V) 1.7V RDS(ON)(mΩ) 4mΩ ID(A) 120A
Descripción