Triode/MOS tube/transistor/module

N-channel, 30V, 5.7A, 26.5mΩ@10V

Bidirectional 800V 40A

Type: P-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 52A Power (Pd): 50W On-Resistance (RDS(on)@Vgs,Id): 18mΩ@10V,15A Threshold Voltage ( Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 70nC@10V Input capacitance (Ciss@Vds): 4.55nF@30V, Vds=60V Id=52A Rds=18mΩ, operating temperature: -55℃~+150℃@(Tj)

Automotive power MOSFETs for low power applications. 20V, 260 mΩ, Dual P-Channel MOSFETs with ESD protection using SC-88 encapsulation. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.

P-channel, -60V, -4.4A

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 45A Power (Pd): 40W On-Resistance (RDS(on)@Vgs,Id): 11.5mΩ@10V,10A Threshold Voltage (Vgs(th)@Id): 1.62V@250uA Gate charge (Qg@Vgs): 13nC@10V Input capacitance (Ciss@Vds): 0.64nF@30V, Vds=60V Id=45A Rds=11.5mΩ, working Temperature: -55℃~+150℃@(Tj);