Triode/MOS tube/transistor/module

This dual NPN bipolar transistor device is a spin-off of our popular SOT23, SOT323, SOT563 3-lead devices. The device is suitable for general-purpose amplifier applications and comes in a SOT963 six-lead surface-mount encapsulation. By putting two discrete devices into one encapsulation, the device is suitable for low power surface mount applications where board space is at a premium.

600V 8A

PNP, Vceo=-160V, Ic=-1A

This device is specifically designed as a single encapsulation solution for the dual switch requirements in cell phones and other ultra-portable applications. It features two independent N-channel MOSFETs with low on-resistance for lowest conduction losses. MicroFET 2x2 encapsulation provides excellent thermal performance for its physical size, making it ideal for linear mode applications.

N-channel, 30V, 75A, 5mΩ@10V

This Darlington bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) are complementary devices.