Triode/MOS tube/transistor/module

N-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 50A Power (Pd): 42W On-resistance (RDS(on)Max@Vgs,Id): 8.5mΩ@10V, 15A

Type: N-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 0.8A Power (Pd): 150mW On-Resistance (RDS(on)@Vgs,Id): 350mΩ@4.5V, Threshold Voltage (Vgs(th)@Id): 0.5V-1.0V@250uA N-channel, 20V, 0.8A, 350mΩ@4.5V

Double NPN, Vceo=40V, Ic=0.6A, hfe=100~300

Type: One N-channel and one P-channel Drain-source voltage (Vdss): 40V Continuous Drain current (Id): 13.5A/-10.8A Power (Pd): 2.5W On-resistance (RDS(on)@Vgs, Id: 16mΩ@10V,5A; 42mΩ@-10V,-4V Threshold Voltage (Vgs(th)@Id): 1.8V@250uA/-1.7@250uA Gate Charge (Qg@Vgs): 8.9nC@10V/20nc @-10V Input Capacitance (Ciss@Vds): 0.516nF@20V/0.75nF@0V, Operating Temperature: -55℃~+150℃@(Tj)

Collector-base reverse breakdown voltage 700V, collector-emitter reverse breakdown voltage 400V, amplification factor 8-40, collector current IC4A

P-channel, -100V, -38A, 60mΩ@10V