Triode/MOS tube/transistor/module
MSKSEMI (Mesenco)
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MOS tube type: 2 N-channel drain-source voltage (Vdss): 55V continuous drain current (Id): 300mA power (Pd): 313mW on-resistance (RDS(on)@Vgs,Id): 1.2Ω@10V ,300mA
Descripción
ST (STMicroelectronics)
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onsemi (Ansemi)
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DIODES (US and Taiwan)
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HUAYI (Hua Yi Wei)
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CJ (Jiangsu Changdian/Changjing)
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PNP, Vceo=-30V, Ic=-1.5A, hfe=160~320
Descripción
YONGYUTAI (Yongyutai)
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Infineon (Infineon)
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DIODES (US and Taiwan)
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HUAYI (Hua Yi Wei)
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VBsemi (Wei Bi)
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CJ (Jiangsu Changdian/Changjing)
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KY (Han Kyung Won)
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Ruichips (Ruijun Semiconductor)
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ST (STMicroelectronics)
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YONGYUTAI (Yongyutai)
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