Triode/MOS tube/transistor/module

Dual N-channel, 20V, 2A, 0.125Ω@4.5V

N channel

N channel

N-channel 30V 38A

NPN, Vceo=50V, Ic=0.15A

This NPN bipolar transistor is suitable for industrial and consumer applications. The device is housed in a SOT-223 encapsulation and is suitable for medium power surface mount applications.

20V N+P

Configuration Single Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -68 VGS(th)(v) -1.8 RDS(ON)(m?)@4.173V 10 Qg(nC) @4.5V 60 QgS(nC) 9 Qgd(nC) 15 Ciss(pF) 3415 Coss(pF) 245 Crss(pF) 131

MOSFET, P-channel 20/10V 3A VGS(th)=0.7V 64mΩ@3A&4.5V, SOT-23

These dual N-channel logic level enhancement mode field effect transistors are produced using a high cell density DMOS proprietary technology. This very high-density process is ideal for minimizing on-resistance. This device is designed to replace digital transistors in low voltage applications. Because no biasing resistors are required, these N-channel FETs can replace several digital transistors with various biasing resistors.