Triode/MOS tube/transistor/module
Infineon (Infineon)
Fabricantes
N-channel, Vce=600V, Ic=40A, Vce(on)=1.72V
Descripción
FUXINSEMI (Fuxin Senmei)
Fabricantes
ST (STMicroelectronics)
Fabricantes
HUAYI (Hua Yi Wei)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
VISHAY (Vishay)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
ST (STMicroelectronics)
Fabricantes
N groove 60V 60A
Descripción
WEIDA (Weida)
Fabricantes
NPN,Vceo=40V,Ic=200mA
Descripción
VBsemi (Wei Bi)
Fabricantes
N+N channel, 60V, 7A, 28mΩ@10V
Descripción
TOSHIBA (Toshiba)
Fabricantes
GOFORD (valley peak)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
LOWPOWER (Weiyuan Semiconductor)
Fabricantes
N+P channel MOS
Descripción
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
sinai (Sinai)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 70 VGS(th)(v) 2.9 RDS(ON)(m?)@4.379V - Qg(nC)@4.5V 28.7 QgS(nC) 10.5 Qgd(nC) 9.9 Ciss(pF) 3240 Coss(pF) 210 Crss(pF) 146
Descripción