Triode/MOS tube/transistor/module

Power MOSFETs for low power applications. 60V, 340mA, 1.6 Ω, single N-channel, SC-70.

Configuration Single Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -4 VGS(th)(v) -0.8 RDS(ON)(m?)@4.47V 60 Qg(nC) @4.5V 10.2 QgS(nC) 1.89 Qgd(nC) 3.1 Ciss(pF) 857 Coss(pF) 114 Crss(pF) 108

Drain-source voltage (Vdss): 400V Continuous drain current (Id): 10A MOS tube

Bidirectional 16A, 600V, same as BTA16-600

Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 18 VGS(th)(v) 1.8 RDS(ON)(m?)@4.383V 75 Qg(nC)@4.5V 5.5 QgS(nC) 1.8 Qgd(nC) 2.1 Ciss(pF) 450 Coss(pF) 55 Crss(pF) 38

N-channel 20V 3.2A

N-channel, 100V, 97A, 9mΩ@10V

P channel -30V -6.5A