Triode/MOS tube/transistor/module

This N-Channel MV MOSFET is produced using ON Semiconductor's advanced PowerTrench process which incorporates Shielded Gate technology. This process has been optimized to minimize on-resistance while maintaining excellent switching performance with the industry's best soft body diode.

Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 110A Power (Pd): 125W On-Resistance (RDS(on)@Vgs,Id): 4.1mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.8V@250uA Gate charge (Qg@Vgs): 65.5nC@10V Input capacitance (Ciss@Vds): 3.58nF@50V , Vds=100V Id=110A Rds=4.1mΩ, Working temperature: -55℃~+150℃@(Tj)

Type NPN IC(A) 0.1 VCBO(V) 80 VCEO(V) 65 VEBO(V) 6 VCE(sat)(V) 0.6

This N-channel MOSFET device is produced on Fairchild Semiconductor's advanced PowerTrench process, which is designed for r

Configuration Single Type N-Ch VDS(V) 80 VGS(V) 25 ID(A)Max. 96 VGS(th)(v) 3 RDS(ON)(m?)@4.461V - Qg(nC)@4.5V - QgS(nC) 16 Qgd(nC) 28 Ciss(pF) 3800 Coss(pF) 389 Crss(pF) 250

N-channel, 650V, 10A, 1Ω@10V

N-channel, 30V, 4.8A, 34mΩ@10V