Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
Xiner (Core Energy Semiconductor)
Fabricantes
VISHAY (Vishay)
Fabricantes
N-channel, 200V, 1.7A, 0.24Ω@10V
Descripción
LONTEN (Longteng Semiconductor)
Fabricantes
P channel -30V -4.3A
Descripción
Infineon (Infineon)
Fabricantes
ST (STMicroelectronics)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.
Descripción
Infineon (Infineon)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 20 VGS(V) 8 ID(A)Max. 0.6 VGS(th)(v) - RDS(ON)(m?)@4.14V 140 Qg(nC)@4.5V - QgS(nC) - Qgd(nC) - Ciss(pF) 130 Coss(pF) 20 Crss(pF) 16
Descripción