Triode/MOS tube/transistor/module
U-NIK (Xu Kang)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
YJQ20N04A-F1-1100HF
Descripción
onsemi (Ansemi)
Fabricantes
This PNP bipolar power transistor is suitable for high power amplifier and switching amplifier applications. 2N3055 (NPN) and MJ2955 (PNP) are complementary devices.
Descripción
VISHAY (Vishay)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
N+N channel, VDSS withstand voltage 20V, ID current 5A, RDON on-resistance 23mR@VGS 4.5V(MAX), VGS(th) turn-on voltage 0.5-1.2V,
Descripción
PUOLOP (Dipu)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
VISHAY (Vishay)
Fabricantes
VISHAY (Vishay)
Fabricantes
onsemi (Ansemi)
Fabricantes
This NPN bipolar transistor is suitable for high gain, low noise general purpose amplifier applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.
Descripción
Infineon (Infineon)
Fabricantes
N-channel, 60V, 45A, 5.7mΩ@10V
Descripción
onsemi (Ansemi)
Fabricantes
Infineon (Infineon)
Fabricantes
VBsemi (Wei Bi)
Fabricantes