Triode/MOS tube/transistor/module
CJ (Jiangsu Changdian/Changjing)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
DC (Dongchen)
Fabricantes
Infineon (Infineon)
Fabricantes
WILLSEMI (Will)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Techcode (TED)
Fabricantes
N-channel 20V 3.4mΩ@4.5V
Descripción
ST (STMicroelectronics)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
YJS4953A-F2-0000HF
Descripción
Collector-base reverse breakdown voltage 50V, collector-emitter reverse breakdown voltage 45V, collector current IC150mA,
Descripción
onsemi (Ansemi)
Fabricantes
Power MOSFET, 40 V, 1.4 mΩ, 200 A, single N-channel
Descripción
VBsemi (Wei Bi)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
MOS, DFN-8 5*6, N+P channel, 40V, 20A, 17mΩ (Max), 25W
Descripción