Triode/MOS tube/transistor/module
APM (Jonway Microelectronics)
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PSI (Baolixin)
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HUASHUO (Huashuo)
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Collector-base reverse breakdown voltage 40V, collector-emitter reverse breakdown voltage 25V, collector current IC1500mA,
Descripción
Infineon (Infineon)
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JJW (Jiejiewei)
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DIODES (US and Taiwan)
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NCE (Wuxi New Clean Energy)
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CJ (Jiangsu Changdian/Changjing)
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ST (STMicroelectronics)
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N-channel, 900V, 8A, 1.3Ω@10V
Descripción
onsemi (Ansemi)
Fabricantes
This bipolar power transistor is suitable for high power audio, stepper motors, and other linear applications. It can also be used in power switching circuits such as relay or electromagnetic drivers, DC-DC converters, inverters, or inductive loads that require a higher safe operating area than the 2N3055.
Descripción
Applications: communication modules, industrial control, artificial intelligence, consumer electronics
Descripción
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
YANGJIE (Yang Jie)
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DTA144EE-F2-0000HF
Descripción
VISHAY (Vishay)
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VISHAY (Vishay)
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WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 2.8 VGS(th)(v) 1.5 RDS(ON)(m?)@4.78V 150 Qg(nC)@4.5V - QgS(nC) 3.2 Qgd(nC) 4.7 Ciss(pF) 690 Coss(pF) 120 Crss(pF) 90
Descripción