Triode/MOS tube/transistor/module
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes
MOS, TO-263, N-channel, 40V, 80A, 5.8mΩ (Max), 115W
Descripción
Crystal Conductor Microelectronics
Fabricantes
JJW (Jiejiewei)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
CYSTECH (Quan Yuxin)
Fabricantes
100V/1.7A/N channel
Descripción
RealChip (Shenxin Semiconductor)
Fabricantes
P-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 3A Power (Pd): 1.25W On-resistance (RDS(on)Max@Vgs,Id): 165mΩ@10V, 2A
Descripción
VBsemi (Wei Bi)
Fabricantes
SHIKUES (Shike)
Fabricantes
LRC (Leshan Radio)
Fabricantes
LGE (Lu Guang)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VISHAY (Vishay)
Fabricantes
Infineon (Infineon)
Fabricantes
Vce=600V, Ic=30A, Vce(sat)=1.5V
Descripción
onsemi (Ansemi)
Fabricantes
N-channel, 800V, 8A, 1.55Ω@10V
Descripción
DIODES (US and Taiwan)
Fabricantes
JSMSEMI (Jiesheng Micro)
Fabricantes
DIODES (US and Taiwan)
Fabricantes