Triode/MOS tube/transistor/module
VISHAY (Vishay)
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Tokmas (Tokmas)
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N-channel MOSF, 30V3A65m?
Descripción
TECH PUBLIC (Taizhou)
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VBsemi (Wei Bi)
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N-channel 600V 12A
Descripción
CJ (Jiangsu Changdian/Changjing)
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APM (Jonway Microelectronics)
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SPTECH (Shenzhen Quality Super)
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GOFORD (valley peak)
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Infineon (Infineon)
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Infineon (Infineon)
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N-channel, 500V, 47A, 90mΩ@10V
Descripción
DIODES (US and Taiwan)
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Dual NPN, Vceo=45V, Ic=100mA
Descripción
NCE (Wuxi New Clean Energy)
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China Resources Huajing
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N-channel, 600V, 10A, 750mΩ@10V
Descripción
LONTEN (Longteng Semiconductor)
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MSKSEMI (Mesenco)
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Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 65V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)
Descripción
PUOLOP (Dipu)
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VBsemi (Wei Bi)
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