Triode/MOS tube/transistor/module

NPN 400V 8A

N-channel, 60V, 58A, 10mΩ@10V

Type: P-Channel Drain-Source Voltage (Vdss): -60V Continuous Drain Current (Id): -1.6A Power (Pd): 1.5W On-Resistance (RDS(on)@Vgs,Id): 160mΩ@-10V ,-1.5A Threshold voltage (Vgs(th)@Id):-2V@-250uA P-channel,-60V,-1.6A,160mΩ@10V

Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.

This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.

IRFR5305TRPBF Pin to PIN standard parameter Vth:3.0

N-channel, 20V, 1.5A, 90mΩ@4.5V

MOSFET Type N Drain-Source Voltage (Vdss) (V) 100 Threshold Voltage VGS ±20 Vth(V) 1.2-2.5 On-Resistance RDS(ON) (mΩ) 14/16 Continuous Drain Current ID (A) 50

N-channel, 200V, 18m²@10V, 94A

Transistor Type: PNP Collector Emitter Breakdown Voltage (Vceo): 25V Collector Current (Ic): 1.5A Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA