Triode/MOS tube/transistor/module
Infineon (Infineon)
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LRC (Leshan Radio)
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onsemi (Ansemi)
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ST (STMicroelectronics)
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UMW (Friends Taiwan Semiconductor)
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Cmos (Guangdong Field Effect Semiconductor)
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LRC (Leshan Radio)
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NPN 60V 500mA silk screen 1H MMBTA05 with the same function and pin length
Descripción
Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 5.8A Power (Pd): 1.4W On-Resistance (RDS(on)@Vgs,Id): 32Ω@10V, 2.8A Threshold voltage (Vgs(th)@Id): 1.2V@250μA
Descripción
TECH PUBLIC (Taizhou)
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Infineon (Infineon)
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Runxin (Runxin Micro)
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Gallium nitride GaN power device: Vds:650V Id: 23A Rds:125mΩ Qg:22nC Qrr:55nC
Descripción
NPN, Vceo=30V, Ic=500mA, hfe=177~250
Descripción
CJ (Jiangsu Changdian/Changjing)
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NPN,Vceo=80V,Ic=2A
Descripción
ST (STMicroelectronics)
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VBsemi (Wei Bi)
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BORN (Born Semiconductor)
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