Triode/MOS tube/transistor/module
Regent Energy
Fabricantes
DIODES (US and Taiwan)
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TECH PUBLIC (Taizhou)
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ST (STMicroelectronics)
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IPS (China Resources core power)
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CJ (Jiangsu Changdian/Changjing)
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VBsemi (Wei Bi)
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VISHAY (Vishay)
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WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 150 VGS(V) 25 ID(A)Max. 6 VGS(th)(v) 3 RDS(ON)(m?)@4.284V - Qg(nC)@4.5V - QgS(nC) 6 Qgd(nC) 9.9 Ciss(pF) 1760 Coss(pF) 90 Crss(pF) 45
Descripción
KY (Han Kyung Won)
Fabricantes
GOODWORK (Good Work)
Fabricantes
DIODES (US and Taiwan)
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DIODES (US and Taiwan)
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SPS (American source core)
Fabricantes
NPN, Vceo=20V, Ic=700mA, hfe=160~300
Descripción
DIODES (US and Taiwan)
Fabricantes
TI (Texas Instruments)
Fabricantes
CSD17301Q5A 30V, N-Channel NexFET MOSFET™, Single SON5x6, 3mΩ
Descripción