Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
onsemi (Ansemi)
Fabricantes
This Darlington bipolar power transistor is suitable for general purpose amplifiers and low speed switching motor control applications. The MJH6284 (NPN) and MJH6287 (PNP) are complementary devices.
Descripción
SPS (American source core)
Fabricantes
P-MOS -60V -4A SOP-8 100mΩ@-10V
Descripción
Tokmas (Tokmas)
Fabricantes
JJW (Jiejiewei)
Fabricantes
Ruichips (Ruijun Semiconductor)
Fabricantes
N-channel, 80V, 190A, 4.8mΩ@10V
Descripción
KY (Han Kyung Won)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Configuration Single Type P-Ch VDS(V) -100 VGS(V) 20 ID(A)Max. -35 VGS(th)(v) -1.7 RDS(ON)(m?)@4.518V - Qg(nC) @4.5V - QgS(nC) 9 Qgd(nC) 6 Ciss(pF) 3029 Coss(pF) 129 Crss(pF) 76
Descripción
Hottech (Heketai)
Fabricantes
YANGJIE (Yang Jie)
Fabricantes
Infineon (Infineon)
Fabricantes
PINGWEI (Pingwei)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
NPN 40W 230V 1A Applications: Power amplifier applications. ·Application of driver stage amplifier
Descripción
onsemi (Ansemi)
Fabricantes
This N-channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Descripción
LRC (Leshan Radio)
Fabricantes
SILAN (Silan Micro)
Fabricantes
N-channel 600V 7A
Descripción
CJ (Jiangsu Changdian/Changjing)
Fabricantes