Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
VISHAY (Vishay)
Fabricantes
P-channel, -200V, -3.6A, 1.5Ω@-10V
Descripción
PSI (Baolixin)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
MCC (Meiweike)
Fabricantes
VISHAY (Vishay)
Fabricantes
SINO-IC (Coslight Core)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Littelfuse (American Littelfuse)
Fabricantes
HXY MOSFET (Huaxuanyang Electronics)
Fabricantes
Field effect transistor (MOSFET) N-channel, VDSS withstand voltage 30V, ID current 5A, RDON on-resistance 42mR@VGS 10V(MAX), VGS(th) turn-on voltage 0.4-1.2V,
Descripción
VBsemi (Wei Bi)
Fabricantes
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is designed for improving the overall energy efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It is ideal for use in small switching regulators, offering very low RDS(ON) and gate charge (QG) in a small encapsulation.
Descripción
N-channel, Vce=1200V, Ic=25A
Descripción
N-channel, Vce=1200V, Ic=15A
Descripción
N-channel, Vce=1200V, Ic=40A
Descripción
N-channel, Vce=650V, Ic=40A
Descripción