Triode/MOS tube/transistor/module
SPTECH (Shenzhen Quality Super)
Fabricantes
Ultra high voltage MOS tube
Descripción
HUXN (Huixin)
Fabricantes
Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 15nA DC Current Gain (hFE@Ic,Vce): 420 @2mA,5V Operating temperature: -55℃~+150℃@(Tj)
Descripción
HUASHUO (Huashuo)
Fabricantes
TMC (Taiwan Mao)
Fabricantes
Type N VDS(V) 30V VGS(V) ±12V Vth(V) 1.5V RDS(ON)(mΩ) 28mΩ ID(A) 6.8A
Descripción
PNP, Vceo=-45V, Ic=-500mA, hfe=160~400
Descripción
Infineon (Infineon)
Fabricantes
APM (Jonway Microelectronics)
Fabricantes
LRC (Leshan Radio)
Fabricantes
HUXN (Huixin)
Fabricantes
Chip Transistor Collector-emitter breakdown voltage (Vceo): 30V Collector current (Ic): 3A Power (Pd): 1W DC current gain (hFE@Ic,Vce): 30@20mA, 2V
Descripción
JJW (Jiejiewei)
Fabricantes
VISHAY (Vishay)
Fabricantes
ST (STMicroelectronics)
Fabricantes
onsemi (Ansemi)
Fabricantes
onsemi (Ansemi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Infineon (Infineon)
Fabricantes
N-channel, 55V, 29A, 40mΩ@10V
Descripción