Triode/MOS tube/transistor/module
Galaxy Microelectronics
Fabricantes
GOFORD (valley peak)
Fabricantes
P-channel, -30V, -2A, 125Ω@-10V
Descripción
onsemi (Ansemi)
Fabricantes
This NPN bipolar transistor is suitable for general purpose amplifier applications. This device features a SOT-323/SC-70 encapsulation and is suitable for low power surface mount applications.
Descripción
Infineon (Infineon)
Fabricantes
Infineon (Infineon)
Fabricantes
ARK (Ark Micro)
Fabricantes
N-Channel 600V 0.1A 2.0W
Descripción
Infineon (Infineon)
Fabricantes
N-channel, 650V, 1.8A, 3Ω@10V
Descripción
TWGMC (Taiwan Dijia)
Fabricantes
Type: P-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 2.3A Power (Pd): 1.25W On-Resistance (RDS(on)@Vgs,Id): 120mΩ@4.5V,2.8 A
Descripción
P-channel, 20V, 1.5A, 200mΩ@4.5V
Descripción
DIODES (US and Taiwan)
Fabricantes
GOFORD (valley peak)
Fabricantes
Infineon (Infineon)
Fabricantes
Slkor (Sakor Micro)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
Convert Semiconductor
Fabricantes