Triode/MOS tube/transistor/module
DIODES (US and Taiwan)
Fabricantes
SPTECH (Shenzhen Quality Super)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
ST (STMicroelectronics)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PNP, Vceo=-25V, Ic=-0.5A, hfe=200~350, silk screen 2TY
Descripción
ST (STMicroelectronics)
Fabricantes
Slkor (Sakor Micro)
Fabricantes
GOFORD (valley peak)
Fabricantes
ST (STMicroelectronics)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
Wuxi Unisplendour
Fabricantes
Infineon (Infineon)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
FOSAN (Fuxin)
Fabricantes
MSKSEMI (Mesenco)
Fabricantes
MOS tube type: N-channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 0.3A Power (Pd): 0.35W On-resistance (RDS(on)@Vgs,Id): 1.2mΩ@10V ,0.2A threshold voltage (Vgs(th)@Id): 0.8V-1.6V@250uA
Descripción
VBsemi (Wei Bi)
Fabricantes