Triode/MOS tube/transistor/module
ST (STMicroelectronics)
Fabricantes
MCC (Meiweike)
Fabricantes
VBsemi (Wei Bi)
Fabricantes
CJ (Jiangsu Changdian/Changjing)
Fabricantes
PNP, Vceo=-400V, Ic=-0.2A
Descripción
HUASHUO (Huashuo)
Fabricantes
DIODES (US and Taiwan)
Fabricantes
Potens (Bosheng Semiconductor)
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LRC (Leshan Radio)
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CJ (Jiangsu Changdian/Changjing)
Fabricantes
VISHAY (Vishay)
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Infineon (Infineon)
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Infineon (Infineon)
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HUAYI (Hua Yi Wei)
Fabricantes
onsemi (Ansemi)
Fabricantes
This N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters and can be used with synchronous switching PWM controllers or conventional switching PWM controllers. It is optimized for low gate charge, low rDS(ON) and fast switching.
Descripción
ST (STMicroelectronics)
Fabricantes
N-channel 200V 18A
Descripción
SILAN (Silan Micro)
Fabricantes
WINSOK (Weishuo)
Fabricantes
Configuration Single Type N-Ch VDS(V) 100 VGS(V) 20 ID(A)Max. 4.5 VGS(th)(v) 2 RDS(ON)(m?)@4.278V 135 Qg(nC)@4.5V - QgS(nC) 4.9 Qgd(nC) 5.8 Ciss(pF) 940 Coss(pF) 80 Crss(pF) 50
Descripción
DIODES (US and Taiwan)
Fabricantes
UMW (Friends Taiwan Semiconductor)
Fabricantes
Cmos (Guangdong Field Effect Semiconductor)
Fabricantes