Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 60 VGS(th)(v) 3 RDS(ON)(m?)@4.486V 15 Qg(nC)@4.5V 36 QgS(nC) 9.9 Qgd(nC) 6.6 Ciss(pF) 2498 Coss(pF) 185 Crss(pF) 80

NPN, Vceo=750V, Ic=3A

N-channel, 40V, 90A, 1.4mΩ@10V

Type N VDSS(V) 60 VGS(V) 20 VTH(V) 0.5 IDS68°C(A) 5.3 RDS(Max) 128 PD68°C(W) 2.8

Type N VDSS(V) 30 VGS(V) 20 VTH(V) 1 IDS58°C(A) 20 RDS(Max) 6.5 PD58°C(W) 2.8

N-Channel, PowerTrench MOSFET, 60V, 300A, 1.1mΩ

N-channel, 60V, 210A, 4mΩ@10V

N-channel, 60V, 11A, 13mΩ@10V

MOSFET Type N Drain-Source Voltage (Vdss) (V) 40 Threshold Voltage VGS ±20 Vth(V) 1-2.2 On-Resistance RDS(ON) (mΩ) 2.4/2.8 Continuous Drain Current ID (A) 160

MOS (Field Effect Transistor)

This N-channel MOSFET is produced using an advanced Power Trench process optimized for rDS(on), switching performance and robustness.